input charge=12500 electrons
1a/ transit time of MAREBO 4 (Postcript file)
1b/ transit time of MAREBO 4 (text file)
input charge=19000 electrons
2a/ transit time of MAREBO 4 (Postcript file)
2b/ transit time of MAREBO 4 (text file)
The format for text files is "row number//column number//delay measurement"
Measurements were done with 50ke as input charge.
1a/ Transit Time scan at different Id (Postcript file)
1b/ Transit Time scan at different VCCD (Vth=1.4V) (Postcript file)
1c/ Transit Time scan at different VCCD (VCCD-Vth=0.1V) (Postcript file)
1d/ Transit Time scan at different Vth (VCCD=1.5V) (Postcript file)
Transit time measurements were done with 50ke as input charge.
The format for text files is "Vth//don't care//don't care//delay measurement//column number//row number//pixel number".
Note that columns 1 to 6 are BiCMOS cells and columns 7 to 12 are CMOS cells.
In text files for different VCCD, some pixels are missing!
THRESHOLD SCANNING
Threshold scan Vth=1.3V, Vccd=1.5V (chip#4)
1a/ full array (Postcript file)
1b/ BiCMOS cell (Postcript file)
1c/ CMOS cell (Postcript file)
1d/ text file
Threshold scan Vth=1.35V, Vccd=1.5V (chip#4)
2a/ full array (Postcript file)
2b/ BiCMOS cell (Postcript file)
2c/ CMOS cell (Postcript file)
2d/ text file
Threshold scan Vth=1.4V, Vccd=1.5V (chip#4)
3a/ full array (Postcript file)
3b/ BiCMOS cell (Postcript file)
3c/ CMOS cell (Postcript file)
3d/ text file
Threshold scan Vth=1.3V, Vccd=2V (chip#4)
4a/ full array, BiCMOS cell, CMOS cell (Postcript file)
4b/ text file
Threshold scan Vth=1.9V, Vccd=2V (chip#4)
5a/ full array, BiCMOS cell, CMOS cell (Postcript file)
5b/ text file
Threshold scan Vth=2V, Vccd=2V (chip#4)
6a/ full array, BiCMOS cell, CMOS cell (Postcript file)
6b/ text file
Threshold scan Vth=1.6V, Vccd=1.7V (chip#4)
7a/ full array, BiCMOS cell, CMOS cell (Postcript file)
7b/ threshold in matrix, BiCMOS cell, CMOS cell (Postcript file)
7c/ text file
TRANSIT TIME SCANNING
Transit Time scan at different Id (chip#4)
1a/ Id=2uA (Postcript file)
1b/ text file
1c/ Id=4uA (Postcript file)
1d/ text file
1e/ Id=6uA (Postcript file)
1f/ text file
1g/ Id=8uA (Postcript file)
1h/ text file
Transit Time scan at different VCCD (VCCD-Vth remains constant=0.1), chip#4
2a/ VCCD=1.2V (Postcript file)
2b/ text file
2c/ VCCD=1.3V (Postcript file)
2d/ text file
2e/ VCCD=1.4V (Postcript file)
2f/ text file
2g/ VCCD=1.5V (Postcript file)
2h/ text file
2i/ VCCD=1.6V (Postcript file)
2j/ text file
2k/ VCCD=1.7V (Postcript file)
2l/ text file
2m/ VCCD=1.8V (Postcript file)
2n/ text file
2o/ VCCD=1.9V (Postcript file)
2p/ text file
Transit Time scan at different Vth (VCCD=1.5V), chip#4
3a/ Vth=0.8V (Postcript file)
3b/ text file
3c/ Vth=1V (Postcript file)
3d/ text file
3e/ Vth=1.2V (Postcript file)
3f/ text file
3g/ Vth=1.4V (Postcript file)
3h/ text file
TOT MEASUREMENT
TOT measurement for BiCMOS cell (chip#4)
1a/ Cell_2/30 Vccd-Vth=const. (GIF file)
1b/ (text file)
TOT measurement for CMOS cell (chip#4)
1a/ Cell_11/30 Vccd-Vth=const. (GIF file)
1b/ (text file)
TIMEWALK MEASUREMENT
Timewalk measurement for CMOS cell (chip#4)
Timewalk measurement for BiCMOS cell (chip#4)
Timewalk measurement for CMOS cells with additional capacitance (chip#F3)
1a/ Timewalk of CMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of CMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of CMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for BiCMOS cells with additional capacitance (chip#F3)
1a/ Timewalk of BiCMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of BiCMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of BiCMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for CMOS cells and Ip influence (chip#F3)
1a/ Timewalk of CMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of CMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of CMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for BiCMOS cells and Ip influence (chip#F3)
1a/ Timewalk of BiCMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of BiCMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of BiCMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for CMOS cells and Id influence (chip#F3)
1a/ Timewalk of CMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of CMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of CMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for BiCMOS cells and Id influence (chip#F3)
1a/ Timewalk of BiCMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of BiCMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of BiCMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for CMOS cells and If influence (chip#F3)
1a/ Timewalk of CMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of CMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of CMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for BiCMOS cells and If influence (chip#F3)
1a/ Timewalk of BiCMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of BiCMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of BiCMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for CMOS cells and Vth influence (chip#F3)
1a/ Timewalk of CMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of CMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of CMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for BiCMOS cells and Vth influence (chip#F3)
1a/ Timewalk of BiCMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of BiCMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of BiCMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for CMOS cells and Vccd influence, Vccd-Vth=const. (chip#F3)
1a/ Timewalk of CMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of CMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of CMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
Timewalk measurement for BiCMOS cells and Vccd influence, Vccd-Vth=const. (chip#F3)
1a/ Timewalk of BiCMOS cells, inj. charge up to 150ke- above threshold (Postscript file)
1b/ Timewalk of BiCMOS cells, inj. charge up to 25ke- above threshold (Postscript file)
1c/ Timewalk of BiCMOS cells, inj. charge up to 5ke- above threshold (Postscript file)
